US Patent Application 17752941. VIA STRUCTURE FOR EMBEDDED COMPONENT AND METHOD FOR MAKING SAME simplified abstract

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VIA STRUCTURE FOR EMBEDDED COMPONENT AND METHOD FOR MAKING SAME

Organization Name

Intel Corporation

Inventor(s)

Kristof Darmawikarta of Chandler AZ (US)

Srinivas V. Pietambaram of Chandler AZ (US)

Haobo Chen of Chandler AZ (US)

VIA STRUCTURE FOR EMBEDDED COMPONENT AND METHOD FOR MAKING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17752941 titled 'VIA STRUCTURE FOR EMBEDDED COMPONENT AND METHOD FOR MAKING SAME

Simplified Explanation

The patent application describes a via structure for an embedded component and a method for making it.

  • The via structure consists of a conductive pillar attached perpendicularly to a surface of a build-up dielectric layer.
  • The surface and the pillar are covered by a film layer that retains a specific profile.
  • A dielectric layer is located on top of the film layer, with a planar upper surface.
  • The top of the pillar is exposed at the upper surface of the dielectric layer.
  • The film layer acts as a barrier to cracking and is chosen to be harder than the dielectric layer material.


Original Abstract Submitted

A via structure for an embedded component and method for making same. The via structure includes a pillar of conductive material perpendicularly attached to a surface of a build-up dielectric layer. The surface and the pillar are conformally covered by a film layer. The film layer is conformally applied and retains a feature landscape profile. A dielectric layer is located on the film layer, the dielectric layer has an upper dielectric surface that is planar. The pillar has a top that is exposed at the upper dielectric surface. The film layer can act as a barrier to cracking because it is selected to have a higher hardness than the material making up the dielectric layer