US Patent Application 17752580. MEMORY DEVICES AND METHODS FOR OPERATING THE SAME simplified abstract

MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Hsiang-Wei Liu of Tainan City (TW)]]

MEMORY DEVICES AND METHODS FOR OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17752580 titled 'MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

Simplified Explanation

The abstract describes a memory device that includes a first memory cell with a transistor and an anti-fuse structure connected in series.

• The first memory cell consists of a transistor with a gate structure, source/drain structures, and an anti-fuse structure.
• The transistor has a gate structure that extends across an active region.
• The active region contains a first source/drain structure and a second source/drain structure.
• The anti-fuse structure includes a first electrode connected to the first source/drain structure.
• The anti-fuse structure also includes a second electrode positioned over a dummy gate structure.
• A first insulator is placed between the first electrode and the second electrode to provide lateral separation.

Original Abstract Submitted

A memory device includes a first memory cell including a first transistor and a first anti-fuse structure electrically coupled to each other in series. The first transistor includes a first gate structure extending across an active region, a first source/drain structure disposed in a first portion of the active region, and a second source/drain structure disposed in a second portion of the active region. The first anti-fuse structure includes a first electrode electrically coupled to the first source/drain structure, a second electrode disposed over a first dummy gate structure, and a first insulator laterally interposed between the first electrode and the second electrode.