US Patent Application 17750151. SYSTEM AND METHOD FOR DETECTING DEBRIS IN A PHOTOLITHOGRAPHY SYSTEM simplified abstract
Contents
SYSTEM AND METHOD FOR DETECTING DEBRIS IN A PHOTOLITHOGRAPHY SYSTEM
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Shang-Chieh Chien of Hsinchu (TW)
Wei-Shin Cheng of Hsinchu (TW)
Cheng Hung Tsai of Hsinchu (TW)
SYSTEM AND METHOD FOR DETECTING DEBRIS IN A PHOTOLITHOGRAPHY SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17750151 titled 'SYSTEM AND METHOD FOR DETECTING DEBRIS IN A PHOTOLITHOGRAPHY SYSTEM
Simplified Explanation
The patent application describes an extreme ultraviolet (EUV) photolithography system that uses a scanner to direct EUV light onto an EUV reticle.
- The system includes contamination reduction structures positioned within the scanner.
- These structures are designed to attract and decompose contaminant particles present in the scanner.
- The contamination reduction structure utilizes a highly electronegative surface material.
- The electronegative surface material helps in attracting and decomposing the contaminant particles effectively.
- This innovation aims to improve the cleanliness and performance of the EUV photolithography system.
Original Abstract Submitted
An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.
