US Patent Application 17749038. INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING simplified abstract
Contents
INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17749038 titled 'INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING
Simplified Explanation
The patent application describes a method for forming a semiconductor device.
- The method involves removing a light-sensitive material from a workpiece using polarized electromagnetic radiation.
- The workpiece is then annealed, or heated, using electromagnetic radiation polarized in a different direction than the one used for removing the light-sensitive material.
- In some cases, the electromagnetic radiation used for annealing is not polarized.
- The method also ensures that the removed light-sensitive material is exhausted from the chamber where the removal process takes place, preventing it from depositing on chamber surfaces.
Original Abstract Submitted
A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.
