US Patent Application 17747939. LITHOGRAPHY SYSTEM AND METHODS simplified abstract

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LITHOGRAPHY SYSTEM AND METHODS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shang-Chieh Chien of Hsinchu (TW)

Hung-Wen Cho of Hsinchu (TW)

Wei-Shin Cheng of Hsinchu (TW)

Ming-Hsun Tsai of Hsinchu (TW)

Jyun-Yan Chuang of Hsinchu (TW)

Li-Jui Chen of Hsinchu (TW)

Heng-Hsin Liu of Hsinchu (TW)

LITHOGRAPHY SYSTEM AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17747939 titled 'LITHOGRAPHY SYSTEM AND METHODS

Simplified Explanation

The patent application describes a method for lithography, a process used in semiconductor manufacturing.

  • The method involves depositing a mask layer on a substrate.
  • Radiation reflected from a collector of a lithography system is directed towards the mask layer based on a specific pattern.
  • A blocking structure, attached to a reflector of the lithography system, blocks a portion of the radiation.
  • The mask layer is then selectively removed in regions exposed to the radiation, creating openings.
  • Material from a layer beneath the mask layer is removed through the openings.


Original Abstract Submitted

A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.