US Patent Application 17747759. TRANSDUCER DEVICE AND METHOD OF MANUFACTURE simplified abstract
Contents
TRANSDUCER DEVICE AND METHOD OF MANUFACTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
TRANSDUCER DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17747759 titled 'TRANSDUCER DEVICE AND METHOD OF MANUFACTURE
Simplified Explanation
The patent application describes a method of forming a transducer.
- The method involves depositing a first dielectric layer on a first electrode.
- The first dielectric layer is then patterned to create different densities of protrusions in different regions.
- A second dielectric layer is used to bond the first dielectric layer to a second electrode, creating a cavity between them.
- The protrusions are located within this cavity.
Original Abstract Submitted
A method of forming a transducer includes depositing a first dielectric layer on a first electrode, patterning the first dielectric layer to form a plurality of first protrusions in a first region and a plurality of second protrusions in a second region, where a density of the plurality of first protrusions in the first region is different from a density of the plurality of second protrusions in the second region, and bonding the first dielectric layer to a second electrode using a second dielectric layer, where sidewalls of the second dielectric layer define a cavity disposed between the first electrode and the second electrode, and where the plurality of first protrusions and the plurality of second protrusions are disposed in the cavity.
