US Patent Application 17746290. METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND IMAGING APPARATUS simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND IMAGING APPARATUS
Inventors
METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND IMAGING APPARATUS - A simplified explanation of the abstract
- This abstract for appeared for patent application number 17746290 Titled 'METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE, AND IMAGING APPARATUS'
Simplified Explanation
The abstract describes a semiconductor package and a method of manufacturing it, as well as an imaging apparatus. The method involves preparing a substrate with a first connection region and a sensor chip with a second connection region. Multiple layers of nano low-melting-point metal materials with different melting point gradients are applied as bonding layers on both connection regions. The substrate and sensor chip are then aligned and tightly compressed, forming a composite structure. This structure is treated at a specific temperature, pressure, and with ultrasonic waves to create a eutectic, or a homogeneous mixture of the bonding layers.
Original Abstract Submitted
A semiconductor package and a method of manufacturing the same, and an imaging apparatus are provided. The method includes preparing a substrate having a first connection region and a sensor chip having a second connection region. A first bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the first connection region. A second bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the second connection region. The substrate and the sensor chip are overlapped to align and tightly compress the first and second bonding layers, to obtain a composite structure. The composite structure is treated at a temperature of 30 to 180° C., under a pressure of 1 to 8 MPa, and with an ultrasonic of 10 to 30 kHz to form the first and second bonding layers into a eutectic.
