US Patent Application 17742272. SEMICONDUCTOR DEVICE WITH T-SHAPED ACTIVE REGION AND METHODS OF FORMING SAME simplified abstract

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SEMICONDUCTOR DEVICE WITH T-SHAPED ACTIVE REGION AND METHODS OF FORMING SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Huaixin Xian of Hsinchu (TW)


Zhang-Ying Yan of Hsinchu (TW)


Qingchao Meng of Hsinchu (TW)


SEMICONDUCTOR DEVICE WITH T-SHAPED ACTIVE REGION AND METHODS OF FORMING SAME - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17742272 Titled 'SEMICONDUCTOR DEVICE WITH T-SHAPED ACTIVE REGION AND METHODS OF FORMING SAME'

Simplified Explanation

This abstract describes a semiconductor device that consists of a cell region with active regions. These active regions contain components of transistors and extend in a specific direction. Most of the active regions are rectangular in shape. However, there is one active region that has a T-shape, with a stem extending in a different direction and two arms extending from the same end of the stem. Additionally, there are two majorities of active regions that are aligned at their ends, forming reference lines parallel to the boundaries of the cell region.


Original Abstract Submitted

A semiconductor device includes: a cell region including active regions that extend in a first direction and have components of corresponding transistors formed therein; a first majority of the active regions being rectangular; a first one of the active regions having a T-shape including a stem that extends in a second direction perpendicular to the first direction, and, relative to the first direction, first and second arms that extend from a same end of the stem and away from each other; and, relative to the first direction, a second majority of the active regions having aligned first ends defining a first reference line proximate and parallel to a first boundary of the cell region, and a third majority of the active regions having aligned second ends defining a second reference line proximate and parallel to a second boundary of the cell region.