US Patent Application 17740331. METHOD OF FORMING FERROELECTRIC MEMORY DEVICE simplified abstract
Contents
METHOD OF FORMING FERROELECTRIC MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Rainer Yen-Chieh Huang of Changhua County (TW)
Han-Ting Tsai of Kaoshiung (TW)
Kuo-Chang Chiang of Hsinchu City (TW)
Min-Kun Dai of Hsinchu City (TW)
Chung-Te Lin of Tainan City (TW)
METHOD OF FORMING FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17740331 titled 'METHOD OF FORMING FERROELECTRIC MEMORY DEVICE
Simplified Explanation
The patent application describes a method of forming a ferroelectric memory device.
- The method involves using atomic layer deposition (ALD) to form a ferroelectric layer between a gate electrode and a channel layer.
- The ALD process includes two sections: a first section where a first precursor is provided, and a second section where a first mixed precursor is provided.
- The first mixed precursor consists of a hafnium-containing precursor and a zirconium-containing precursor.
- The ferroelectric layer is directly formed as HfZrO with an orthorhombic phase (O-phase), which enhances the ferroelectric polarization and property of the device.
Original Abstract Submitted
Provided is a method of forming a ferroelectric memory device including: forming a ferroelectric layer between a gate electrode and a channel layer by a first atomic layer deposition (ALD) process. The first ALD process includes: providing a first precursor during a first section; and providing a first mixed precursor during a second section, wherein the first mixed precursor includes a hafnium-containing precursor and a zirconium-containing precursor. In this case, the ferroelectric layer is directly formed as HfZrO with an orthorhombic phase (O-phase) to enhance the ferroelectric polarization and property.
