US Patent Application 17739149. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Teng Liao of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17739149 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device structure and methods of forming it.
- The structure includes two source/drain regions and an interlayer dielectric layer between them.
- There is a conductive feature in the interlayer dielectric layer, which is connected to the first source/drain region.
- The conductive feature has a first portion and a second portion that form an angle less than 180 degrees.
- The purpose of this structure is not explicitly mentioned in the abstract.
Original Abstract Submitted
A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain region, a second source/drain region adjacent the first source/drain region, an interlayer dielectric layer disposed between the first source/drain region and the second source/drain region, and a conductive feature disposed in the interlayer dielectric layer between the first source/drain region and the second source/drain region. The conductive feature includes a first portion and a second portion extending from the first portion, and an angle is formed between the first portion and the second portion. The angle is less than about 180 degrees. The conductive feature is electrically connected to the first source/drain region.
