US Patent Application 17738526. PULSED ETCH PROCESS simplified abstract
Contents
PULSED ETCH PROCESS
Organization Name
Inventor(s)
Yifeng Zhou of Santa Clara CA (US)
Qian Fu of Santa Clara CA (US)
PULSED ETCH PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17738526 titled 'PULSED ETCH PROCESS
Simplified Explanation
- The patent application describes a method for etching a sample using a plasma etch pulse. - The method involves directing a gas flow containing silicon tetrachloride (SiCl) and a diluent towards the sample. - During the gas flow, a bias power is applied for a certain period of time to achieve a bias state. - Then, a source power is applied for another period of time to achieve a source state. - After that, no bias power and no source power are applied for a certain period of time to achieve a recovery state. - This plasma etch pulse is repeated until a desired amount of the sample is etched.
Original Abstract Submitted
Described herein is a method for etching a sample. The method includes performing a plasma etch pulse. The plasma etch pulse is performed by directing a gas flow comprising silicon tetrachloride (SiCl) and a diluent towards the sample. While directing the gas flow, a bias power is applied to achieve a bias state for a first time period. Then, a source power is applied to achieve a source state for a second time period, and then no bias power and no source power is applied to achieve a recovery state for a third time period. The plasma etch pulse is repeated until a target amount of the sample is etched.
