US Patent Application 17738521. FINFET ISOLATION DEVICE AND METHOD simplified abstract
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Contents
FINFET ISOLATION DEVICE AND METHOD
Organization Name
Inventor(s)
Neng-Kuo Chen of Boise ID (US)
Andrew Dennis Carswell of Boise ID (US)
FINFET ISOLATION DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 17738521 titled 'FINFET ISOLATION DEVICE AND METHOD
Simplified Explanation
The patent application describes an invention related to transistors, memory devices, and systems.
- The invention includes a structure called an inter-gate dielectric structure, which is placed between adjacent gates.
- The inter-gate dielectric structure consists of two different dielectric materials.
- The first dielectric material is located next to a fin channel, while the second dielectric material is placed over the first dielectric material.
- The purpose of this structure is not explicitly mentioned in the abstract.
Original Abstract Submitted
Apparatus and methods are disclosed, including transistors, memory devices and systems. Example transistors, memory devices, systems and methods include an inter-gate dielectric structure between adjacent gates, wherein the inter-gate dielectric structure includes a first dielectric material adjacent a fin channel, and a second dielectric material different from the first dielectric material located over the first dielectric material.
