US Patent Application 17738182. METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract
Contents
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Hsin Yang of Zhubei City (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17738182 titled 'METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Simplified Explanation
The patent application describes a method for forming a semiconductor structure.
- The method involves forming a contact feature over an insulating layer.
- A first passivation layer is then formed over the contact feature.
- The first passivation layer is etched to create a trench that exposes the contact feature.
- An oxide layer is formed over the contact feature, the first passivation layer, and in the trench.
- A first non-conductive structure is formed over the oxide layer.
- The first non-conductive structure is patterned to create a gap.
- A conductive material is filled into the gap to create a first conductive feature.
- The first non-conductive structure and the first conductive feature together form a first bonding structure.
- A carrier substrate is attached to the first bonding structure using a second bonding structure over the carrier substrate.
Original Abstract Submitted
A method for forming a semiconductor structure is provided. The method includes forming a contact feature over an insulating layer, forming a first passivation layer over the contact feature, and etching the first passivation layer to form a trench exposing the contact feature. The method also includes forming an oxide layer over the contact feature and the first passivation layer and in the trench, forming a first non-conductive structure over the oxide layer, and patterning the first non-conductive structure to form a gap. The method further includes filling a conductive material in the gap to form a first conductive feature. The first non-conductive structure and the first conductive feature form a first bonding structure. The method further includes attaching a carrier substrate to the first bonding structure via a second bonding structure over the carrier substrate.