US Patent Application 17738032. DIE STACKING STRUCTURE, SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE DIE STACKING STRUCTURE simplified abstract

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DIE STACKING STRUCTURE, SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE DIE STACKING STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Su-Chun Yang of Hsinchu County (TW)

Jih-Churng Twu of Hsinchu County (TW)

Jiung Wu of Taoyuan City (TW)

Chih-Hang Tung of Hsinchu (TW)

Chen-Hua Yu of Hsinchu City (TW)

DIE STACKING STRUCTURE, SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE DIE STACKING STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17738032 titled 'DIE STACKING STRUCTURE, SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE DIE STACKING STRUCTURE

Simplified Explanation

The patent application describes a die stacking structure, semiconductor package, and a manufacturing method for the structure.

  • The structure includes a first device die and multiple second device dies bonded onto the first die and arranged side-by-side.
  • A gap profile modifier is present, which surrounds the bottommost portions of the second device dies. The thickness of the modifier gradually decreases away from the sidewalls of the second dies.
  • The second device dies are laterally enclosed by a dielectric material, which also covers the gap profile modifier.
  • The purpose of this structure is to provide a compact and efficient arrangement of multiple device dies in a semiconductor package.
  • The gradual decrease in thickness of the gap profile modifier helps to optimize the electrical performance and thermal dissipation of the stacked dies.
  • The dielectric material provides insulation and protection to the second device dies and the gap profile modifier.
  • This innovation can potentially improve the performance and reliability of semiconductor packages with stacked dies.


Original Abstract Submitted

A die stacking structure, a semiconductor package and a method for manufacturing the die stacking structure are provided. The die stacking structure includes a first device die; second device dies, bonded onto the first device die, and arranged side-by-side; a gap profile modifier, laterally enclosing bottommost portions of the second device dies, wherein a thickness of the gap profile modifier gradually decreases away from sidewalls of the second device dies; and a dielectric material, covering the gap profile modifier and laterally surrounding the second device dies.

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