US Patent Application 17738028. DEPOSITION TOOL AND METHOD FOR FILLING DEEP TRENCHES simplified abstract
Contents
DEPOSITION TOOL AND METHOD FOR FILLING DEEP TRENCHES
Organization Name
Inventor(s)
Elijah V. Karpov of Portland OR (US)
Matthew Metz of Portland OR (US)
Robert Willoner of Palo Alto CA (US)
DEPOSITION TOOL AND METHOD FOR FILLING DEEP TRENCHES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17738028 titled 'DEPOSITION TOOL AND METHOD FOR FILLING DEEP TRENCHES
Simplified Explanation
The patent application describes a semiconductor deposition tool that includes a specimen support, ion guns, sources, and electron beam guns.
- The electron beam guns, sources, and ion beam guns are positioned below the specimen support, with the specimen facing downward.
- The method involves using the electron beam gun to deposit source material in a trench on the specimen and adjacent surfaces.
- The ion beam gun is then activated to remove portions of the deposited source material on the surfaces adjacent to the trench opening.
Original Abstract Submitted
The present disclosure is directed to semiconductor deposition tools having a specimen support, at least one ion gun directed to a specimen positioned on the specimen support, at least one source, and at least one electron beam gun directed at the source. In an aspect, the electron beam guns, sources, and ion beam guns are positioned below the specimen support and specimen positioned thereon, which has its top surface facing downward. In another aspect, the method includes activating the electron beam gun and depositing the source material in a trench in the specimen and on surfaces adjacent to the opening of the trench and activating the ion beam gun to remove portions of the source material deposited on the surfaces adjacent to the opening of the trench.
