US Patent Application 17738009. METHOD OF FABRICATING CONTACT STRUCTURE simplified abstract

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METHOD OF FABRICATING CONTACT STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Chang-Ting Chung of Taipei City (TW)

Shih-Wei Yeh of Hsinchu City (TW)

Kai-Chieh Yang of New Taipei City (TW)

Yu-Ting Wen of Taichung City (TW)

Yu-Chen Ko of Chiayi City (TW)

Ya-Yi Cheng of Taichung City (TW)

Min-Hsiu Hung of Tainan City (TW)

Chun-Hsien Huang of Hsinchu (TW)

Wei-Jung Lin of Hsinchu City (TW)

Chih-Wei Chang of Hsin-Chu (TW)

Ming-Hsing Tsai of Hsinchu (TW)

METHOD OF FABRICATING CONTACT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17738009 titled 'METHOD OF FABRICATING CONTACT STRUCTURE

Simplified Explanation

The patent application describes a method of fabricating a contact structure in electronic devices.

  • The method involves creating an opening in a dielectric layer and depositing a conductive material layer within the opening and on the dielectric layer.
  • The conductive material layer has a bottom section with a smaller thickness and a top section with a larger thickness.
  • A first treatment is performed to form an oxide layer on both the bottom and top sections of the conductive material layer.
  • A second treatment is then carried out to remove parts of the oxide layer and the conductive material layer.
  • After the second treatment, the bottom and top sections of the conductive material layer have equal thickness.


Original Abstract Submitted

A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

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