US Patent Application 17737504. TRANSISTOR STRUCTURE HAVING IMPROVED ELECTRODE CONDUCTANCE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

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TRANSISTOR STRUCTURE HAVING IMPROVED ELECTRODE CONDUCTANCE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Ming-Yen Chuang of Hsinchu (TW)

Katherine H. Chiang of Hsinchu (TW)

TRANSISTOR STRUCTURE HAVING IMPROVED ELECTRODE CONDUCTANCE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17737504 titled 'TRANSISTOR STRUCTURE HAVING IMPROVED ELECTRODE CONDUCTANCE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The abstract describes a semiconductor device with a transistor structure on a substrate.

  • The transistor structure includes a channel region and a source/drain electrode.
  • The channel region has a lower channel portion and multiple upper channel portions.
  • The upper channel portions protrude into the source/drain electrode, creating an uneven interface.
  • The purpose of this design is not explicitly stated in the abstract.


Original Abstract Submitted

A semiconductor device includes a substrate and a transistor structure disposed on the substrate. The transistor structure includes a channel region and a source/drain electrode disposed on the channel region. The channel region includes a lower channel portion and a plurality of upper channel portions protruding from the lower channel portion into the source/drain electrode to form an uneven interface between the channel region and the source/drain electrode.

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