US Patent Application 17737003. BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
Contents
BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chuan-Feng Chen of Hsinchu (TW)
BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17737003 titled 'BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
- The abstract describes a patent application for a Bipolar Junction Transistor (BJT) and methods of forming it. - The BJT includes a collector region, lower base structure, first and second dielectric layers, upper base structure, emitter region, and sidewall spacer structure. - The first dielectric layer is made of a first oxide, the second dielectric layer is made of a second oxide, and the two oxides have different densities. - The upper base structure is placed on top of the second dielectric layer and the lower base structure. - The emitter region is located on the lower base structure. - The sidewall spacer structure, which separates the emitter region and the upper base structure, is made of a material different from the first and second dielectric layers.
Original Abstract Submitted
A BJT and methods of forming the same are described. The BJT includes a collector region disposed in a substrate, a lower base structure disposed on the collector region, a first dielectric layer surrounding a bottom portion of the lower base structure, and a second dielectric layer surrounding a top portion of the lower base structure. The first dielectric layer includes a first oxide, the second dielectric layer includes a second oxide, and the first and second oxides have different densities. The BJT further includes an upper base structure disposed on the second dielectric layer and the lower base structure, an emitter region disposed on the lower base structure, a sidewall spacer structure disposed between the emitter region and the upper base structure, and the sidewall spacer structure includes a material different from materials of the first and second dielectric layers.
