US Patent Application 17736186. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Meng-Hsiu Hsieh of Hsinchu (TW)

Hsiao-Wen Chung of Taipei City (TW)

Shan-Yu Huang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17736186 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

- The patent application describes a method for fabricating a semiconductor device. - The method involves generating a redistribution layer (RDL) layout, which includes multiple redistribution lines. - A first dummy region is determined in the RDL layout based on the redistribution lines. - Multiple first dummy redistribution lines are placed in the first dummy region. - A first modification process is performed to enlarge at least one of the first dummy redistribution lines. - If the area of the enlarged dummy redistribution line exceeds a threshold value, it is determined as a second dummy region in the RDL layout. - Multiple second dummy redistribution lines are then placed in the second dummy region. - Finally, a metal layer is patterned according to the RDL layout after the second dummy redistribution lines are placed in the second dummy region.

Original Abstract Submitted

A method for fabricating a semiconductor device is provided. The method includes generating a redistribution layer (RDL) layout, wherein the RDL layout comprises a plurality of redistribution lines; determining a first dummy region in the RDL layout according to the redistribution lines; disposing a plurality of first dummy redistribution lines in the first dummy region; performing a first modification process to enlarge at least one of the first dummy redistribution lines; determining the enlarged one of the first dummy redistribution lines as a second dummy region in the RDL layout when an area of the enlarged one of the first dummy redistribution lines is greater than a threshold value; disposing a plurality of second dummy redistribution lines in the second dummy region; and patterning a metal layer according to the RDL layout after disposing the second dummy redistribution lines in the second dummy region.