US Patent Application 17735887. THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE simplified abstract

From WikiPatents
Jump to navigation Jump to search

THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Jaw-Juinn Horng of Hsinchu (TW)

Szu-Lin Liu of Hsinchu City (TW)

Yung-Chow Peng of Hsinchu (TW)

Shenggao Li of Cupertino CA (US)

THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17735887 titled 'THERMAL SENSOR USING INVERSION DIFFUSIVITY RESISTANCE

Simplified Explanation

The patent application describes a device that consists of multiple metal-oxide semiconductor field-effect transistors (MOSFETs) connected in series. Each MOSFET has a gate structure, a drain/source region on one side, and another drain/source region on the other side. The gate structure of each MOSFET is designed to receive a bias voltage, which turns on the MOSFETs and allows them to provide a temperature-dependent resistance. This resistance is then used to measure temperatures.

  • The device includes multiple MOSFETs connected in series.
  • Each MOSFET has a gate structure, drain/source regions, and is biased with a voltage.
  • The MOSFETs provide a temperature-dependent resistance.
  • The resistance is used for temperature measurement.


Original Abstract Submitted

A device including a first plurality of metal-oxide semiconductor field-effect transistors electrically connected in series. Each of the first plurality of metal-oxide semiconductor field-effect transistors includes a first gate structure, a first drain/source region on one side of the first gate structure, and a second drain/source region on another side of the first gate structure. The first gate structure of each of the first plurality of metal-oxide semiconductor field-effect transistors is configured to receive a bias voltage to bias on the first plurality of metal-oxide semiconductor field-effect transistors and provide a temperature dependent resistance through the first plurality of metal-oxide semiconductor field-effect transistors to measure temperatures.