US Patent Application 17735529. TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON simplified abstract
Contents
TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON
Organization Name
Inventor(s)
Luca Fumagalli of Rio Rancho NM (US)
Errol Todd Ryan of Albuquerque NM (US)
Jing Yuwen of Albuquerque NM (US)
David M. Fryauf of Rio Rancho NM (US)
TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON - A simplified explanation of the abstract
This abstract first appeared for US patent application 17735529 titled 'TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON
Simplified Explanation
- The patent application is about techniques for semiconductor devices, specifically those using amorphous silicon. - The application describes a method of etching trenches through multiple layers of a memory, including a phase-change layer, during the manufacturing process. - To protect the phase-change layer during subsequent processing steps, amorphous silicon is applied to it using low-temperature chemical vapor deposition. - This application of amorphous silicon is done without exceeding the melting point of the phase-change layer. - The amorphous silicon can then be oxidized, creating a silicon oxide layer that acts as a protective barrier around the phase-change layer.
Original Abstract Submitted
Techniques for semiconductor devices including amorphous silicon are disclosed. In the illustrative embodiment, trenches are etched through several layers of a memory during manufacture, including through a phase-change layer. To protect the phase-change layer during further processing steps, amorphous silicon is applied to the phase-change layer using low-temperature chemical vapor deposition, which can be done without exceeding the melting point of the phase-change layer. The amorphous silicon can be oxidized, forming a protective silicon oxide layer around the phase-change layer.
