US Patent Application 17735458. MEMORY READ CALIBRATION BASED ON MEMORY DEVICE-ORIGINATED METADATA CHARACTERIZING VOLTAGE DISTRIBUTIONS simplified abstract
MEMORY READ CALIBRATION BASED ON MEMORY DEVICE-ORIGINATED METADATA CHARACTERIZING VOLTAGE DISTRIBUTIONS
Organization Name
Inventor(s)
Dung Viet Nguyen of San Jose CA (US)
Patrick R. Khayat of San Diego CA (US)
Zhengang Chen of San Jose CA (US)
James Fitzpatrick of Laguna Niguel CA (US)
Sivagnanam Parthasarathy of Carlsbad CA (US)
Eric N. Lee of San Jose CA (US)
MEMORY READ CALIBRATION BASED ON MEMORY DEVICE-ORIGINATED METADATA CHARACTERIZING VOLTAGE DISTRIBUTIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17735458 titled 'MEMORY READ CALIBRATION BASED ON MEMORY DEVICE-ORIGINATED METADATA CHARACTERIZING VOLTAGE DISTRIBUTIONS
Simplified Explanation
The patent application describes systems and methods for memory read calibration based on metadata provided by memory devices.
- Memory devices have a memory array with multiple memory cells connected to wordlines and bitlines.
- The controller of the memory device receives metadata values that characterize the voltage distributions of a subset of memory cells connected to bitlines.
- These metadata values reflect the conductive state of the bitlines, indicating the threshold voltage distributions of the memory cells.
- Based on the received metadata values, the controller determines a read voltage adjustment value.
- This read voltage adjustment value is then applied when reading the subset of memory cells, improving the accuracy and reliability of the read operation.
Original Abstract Submitted
Described are systems and methods for memory read calibration based on memory device-originated metadata characterizing voltage distributions. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines; and a controller coupled to the memory array, the controller to perform operations comprising: receiving one or more metadata values characterizing threshold voltage distributions of a subset of the plurality of memory cells connected to one or more bitlines, wherein the one or more metadata values reflect a conductive state of the one or more bitlines; determining a read voltage adjustment value based on the one or more metadata values; and applying the read voltage adjustment value for reading the subset of the plurality of memory cells.
