US Patent Application 17734981. CROSSLINKABLE PHOTORESIST FOR EXTREME ULTRAVIOLET LITHOGRAPHY simplified abstract
Contents
CROSSLINKABLE PHOTORESIST FOR EXTREME ULTRAVIOLET LITHOGRAPHY
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ching-Yu Chang of Hsinchu (TW)
CROSSLINKABLE PHOTORESIST FOR EXTREME ULTRAVIOLET LITHOGRAPHY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17734981 titled 'CROSSLINKABLE PHOTORESIST FOR EXTREME ULTRAVIOLET LITHOGRAPHY
Simplified Explanation
- The patent application describes a method for forming a semiconductor device. - The method involves applying a layer of photoresist material onto a substrate. - The photoresist layer is then exposed to radiation, which creates a pattern within the layer. - The portions of the photoresist layer that were not exposed to the radiation are selectively removed, resulting in a patterned photoresist layer. - The photoresist layer used in this method contains a fluorine-containing polymer, a crosslinker, and a photoactive compound. - The innovation lies in the use of this specific combination of materials in the photoresist layer, which allows for precise patterning in the formation of semiconductor devices.
Original Abstract Submitted
A method for forming a semiconductor device is provided. The method includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer comprises a fluorine-containing polymer, a crosslinker and a photoactive compound.
