US Patent Application 17732873. STRUCTURE AND FORMATION METHOD OF DEVICE WITH FERROELECTRIC LAYER simplified abstract

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STRUCTURE AND FORMATION METHOD OF DEVICE WITH FERROELECTRIC LAYER

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Oreste Madia of Bruxelles (BE)

Georgios Vellianitis of Heverlee (BE)

STRUCTURE AND FORMATION METHOD OF DEVICE WITH FERROELECTRIC LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17732873 titled 'STRUCTURE AND FORMATION METHOD OF DEVICE WITH FERROELECTRIC LAYER

Simplified Explanation

The patent application describes a device structure and a method for its formation.

  • The method involves several steps:
 - First, a carbon-containing layer is formed on a substrate.
 - Then, a hafnium-containing oxide layer is formed on top of the carbon-containing layer.
 - Next, a second carbon-containing layer is formed on top of the hafnium-containing oxide layer.
 - Finally, the hafnium-containing oxide layer is crystallized while it is sandwiched between the two carbon-containing layers.
  • The purpose of this method is to create a specific device structure.
  • The device structure includes a substrate, a first carbon-containing layer, a hafnium-containing oxide layer, and a second carbon-containing layer.
  • The hafnium-containing oxide layer is crystallized to enhance its properties.
  • The carbon-containing layers serve as protective layers and provide stability to the hafnium-containing oxide layer.
  • This device structure and formation method can be used in various applications, such as electronics or semiconductor devices.


Original Abstract Submitted

A device structure and a formation method are provided. The method includes forming a first carbon-containing layer over a substrate and forming a hafnium-containing oxide layer over the first carbon-containing layer. The method also includes forming a second carbon-containing layer over the hafnium-containing oxide layer. The method further includes crystallizing the hafnium-containing oxide layer while the hafnium-containing oxide layer is between the first carbon-containing layer and the second carbon-containing layer.

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