US Patent Application 17728651. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
Adam W. Saxler of Boise ID (US)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17728651 Titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells'
Simplified Explanation
The abstract describes a memory array that consists of strings of memory cells. These memory cells are organized into laterally-spaced memory blocks, each containing a vertical stack. The stack is made up of alternating insulative tiers and conductive tiers, with a conductor tier at the bottom. The memory cells are connected to the conductor tier through channel-material strings that pass through the insulative and conductive tiers. The insulative tier directly above the lowest conductive tier is in direct contact with the conductive material. This insulative material can be made of aluminum oxide, hafnium oxide, zirconium oxide, or carbon-doped insulative material. The abstract also mentions that there are other embodiments and methods disclosed.
Original Abstract Submitted
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conductive material of a lowest of the conductive tiers. Insulating material of the insulative tier that is immediately-directly above the lowest conductive tier is directly against a top of the conductive material of the lowest conductive tier. The insulating material comprises at least one of aluminum oxide, hafnium oxide, zirconium oxide, and carbon-doped insulative material. Other embodiments, including method, are disclosed.
