US Patent Application 17727846. SEMICONDUCTOR STRUCTURE simplified abstract

SEMICONDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yen-Ching Wu of Taoyuan City (TW)

Chung-Kai Lin of Taipei City (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Wen-Chien Lin of Taoyuan City (TW)

Chih-Ling Hsiao of Tainan City (TW)

SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 17727846 Titled 'SEMICONDUCTOR STRUCTURE'

Simplified Explanation

This abstract describes a semiconductor structure that includes various components such as an insulator, a semiconductor fin, a gate stack, a gate contact, a source/drain material, and a source/drain contact structure. The semiconductor fin sticks out from the insulator, and the gate stack is placed on both the semiconductor fin and the insulator. The gate contact is connected to the gate stack, while the source/drain material is placed on the semiconductor fin. The source/drain contact structure is connected to the source/drain material. The semiconductor fin extends in one direction, while the gate stack extends in a different direction. There is a specific offset (S) between the gate contact and the source/drain contact structure, which must satisfy a certain condition based on the width of the semiconductor fin (W) and the dimension of the gate contact (D).

Original Abstract Submitted

A semiconductor structure includes an insulator, a semiconductor fin, a gate stack, a gate contact, a source/drain material, and a source/drain contact structure. The semiconductor fin protrudes from the insulator. The gate stack is disposed on the semiconductor fin and the insulator. The gate contact is disposed on and electrically connected to the gate stack. The source/drain material is disposed on the semiconductor fin. The source/drain contact structure is disposed on and electrically connected to the source/drain material. The semiconductor fin extends along a first direction, the gate stack extends along a second direction different from the first direction. An offset S in the second direction between the gate contact and the source/drain contact structure satisfies: 0<S≤(W/2+D/2), wherein W is a width of the semiconductor fin, and D is a dimension of the gate contact.