US Patent Application 17727820. SEMICONDUCTOR STRUCTURE HAVING THROUGH SUBSTRATE VIA AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR STRUCTURE HAVING THROUGH SUBSTRATE VIA AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei-Ming Wang of Taichung City (TW)

Yu-Hung Lin of Taichung City (TW)

Yu-Hsiao Lin of Taoyuan City (TW)

Shih-Peng Tai of Hsinchu County (TW)

Kuo-Chung Yee of Taoyuan City (TW)

SEMICONDUCTOR STRUCTURE HAVING THROUGH SUBSTRATE VIA AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 17727820 Titled 'SEMICONDUCTOR STRUCTURE HAVING THROUGH SUBSTRATE VIA AND MANUFACTURING METHOD THEREOF'

Simplified Explanation

The abstract describes a semiconductor structure that includes several components. These components include a dielectric layer, a conductive pad embedded in the dielectric layer, a semiconductor substrate, a through substrate via (TSV), and a dielectric liner.

The dielectric layer is a layer of material that acts as an insulator. The conductive pad is a small area within the dielectric layer that allows for electrical connections.

The semiconductor substrate is a material that serves as the foundation for the semiconductor structure. It has a via opening, which is a hole or opening in the substrate. This via opening has a notch, which is a small indentation or cut, near the dielectric layer.

The TSV is a vertical connection that extends from the via opening in the semiconductor substrate into the dielectric layer. It lands on the conductive pad, allowing for electrical connections.

The dielectric liner is a material that is placed in the via opening of the semiconductor substrate. It fills the notch, which helps to separate the TSV from the semiconductor substrate in a lateral direction.

The surface of the dielectric liner that faces the TSV is leveled with the inner sidewall of the dielectric layer that faces the TSV. This means that these two surfaces are made to be at the same height or level.

Overall, this semiconductor structure is designed to provide efficient electrical connections while also ensuring proper separation and insulation between different components.

Original Abstract Submitted

A semiconductor structure includes a dielectric layer, a conductive pad embedded in the dielectric layer, a semiconductor substrate disposed on the dielectric layer and including a via opening with a notch in proximity to the dielectric layer, a through substrate via (TSV) disposed in the via opening of the semiconductor substrate and extending into the dielectric layer to land on the conductive pad, and a dielectric liner disposed in the via opening of the semiconductor substrate and filling the notch to laterally separate the TSV from the semiconductor substrate. A surface of the dielectric liner facing the TSV is substantially leveled with an inner sidewall of the dielectric layer facing the TSV.