US Patent Application 17727737. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jenn-Gwo Hwu of Taipei City (TW)
Jen-Hao Chen of Chiayi County (TW)
Kung-Chu Chen of Chiayi City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17727737 Titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF'
Simplified Explanation
This abstract describes a semiconductor device that consists of three main components: a substrate, a sensing device, and a transistor. The sensing device includes a dielectric layer, a sensing pad, a first sensing electrode, and a second sensing electrode. The dielectric layer is located on top of the substrate, and the sensing pad is in direct contact with the dielectric layer. The first and second sensing electrodes are also in contact with the dielectric layer and surround the sensing pad. Importantly, the distance between the first and second sensing electrodes is greater than the distance between the sensing pad and the first sensing electrode. The transistor is positioned on top of the substrate, and its gate is connected to the sensing pad.
Original Abstract Submitted
A semiconductor device includes a substrate, a sensing device, and a transistor. The sensing device includes a dielectric layer, a sensing pad, a first sensing electrode, and a second sensing electrode. The dielectric layer is over the substrate. The sensing pad is over and in contact with the dielectric layer. The first sensing electrode and the second sensing electrode are over and in contact with the dielectric layer. The first sensing electrode and the second sensing electrode surround the sensing pad, and a distance between the first sensing electrode and the second sensing electrode is greater than a distance between the sensing pad and the first sensing electrode. The transistor is over the substrate. A gate of the transistor is connected to the sensing pad.
