US Patent Application 17727515. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract

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Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Organization Name

Micron Technology, Inc.


Inventor(s)

Alyssa N. Scarbrough of Boise ID (US)


Jordan D. Greenlee of Boise ID (US)


John D. Hopkins of Meridian ID (US)


Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17727515 Titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells'

Simplified Explanation

The abstract describes a memory array that consists of strings of memory cells. These memory cells are organized into laterally-spaced memory blocks, each containing a vertical stack. The stack is made up of alternating insulative tiers and conductive tiers, with a conductor tier at the bottom. The memory cells are connected to the conductor material through channel-material strings that run through the insulative and conductive tiers. Below the stack, there is an insulating tier followed by a metal-material tier. Conductive rings pass through these tiers and connect to the conductor material. Each conductive ring corresponds to a specific horizontal location above which a channel-material string is located. The channel-material strings are electrically coupled to the conductor material through the insulating tier by the conductive rings. The abstract also mentions that there are other embodiments and methods disclosed.


Original Abstract Submitted

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple to conductor material of the conductor tier. Below the stack, an insulating tier is directly above the conductor tier and a metal-material tier is directly above the insulating tier. Conductive rings extend through the metal-material tier and the insulating tier to conductor material of the conductor tier. The conductive rings individually are around individual horizontal locations directly above which are individual of the channel-material strings. The channel-material strings directly electrically couple to the conductor material of the conductor tier through the insulating tier by the conductive rings. Other embodiments, including method, are disclosed.