US Patent Application 17727487. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
Jordan D. Greenlee of Boise ID (US)
Rajasekhar Venigalla of Boise ID (US)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17727487 Titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells'
Simplified Explanation
The abstract describes a method for creating a memory array using a stack of memory cells. The stack is made up of alternating tiers, with a conductor tier containing silicon material at the bottom. The stack also includes memory-block regions and a through-array-via (TAV) region. The memory cells are made up of channel-material strings that pass through the tiers in the memory-block regions. The TAV region has openings that extend to the silicon material in the conductor tier. A metal halide is used to react with the silicon, depositing metal in the conductor tier. Then, conductive material is formed in the TAV openings, creating a TAV that consists of the conductive material and the deposited metal. The abstract also mentions that there are various structure embodiments of this method.
Original Abstract Submitted
A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers directly above a conductor tier that comprises silicon-containing material. The stack comprises laterally-spaced memory-block regions and a through-array-via (TAV) region. The stack comprises channel-material strings that extend through the first tiers and the second tiers in the memory-block regions. The stack comprises TAV openings in the TAV region that extend to the silicon-containing material of the conductor tier. A metal halide is reacted with the silicon of the silicon-containing material to deposit the metal of the metal halide in the conductor tier. After depositing the metal, conductive material is formed in the TAV openings directly against the deposited metal and therefrom a TAV is formed in individual of the TAV openings that comprises the conductive material and the deposited metal. Structure embodiments are disclosed.
