US Patent Application 17726981. MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sheng-Huang Huang of Hsinchu (TW)
Harry-Hak-Lay Chuang of Hsinchu (TW)
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17726981 Titled 'MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME'
Simplified Explanation
This abstract describes a memory device that has a memory unit and a shielding element. The memory unit consists of a bottom electrode, a memory element, and a top electrode. The shielding element is placed on the memory unit to redirect any external magnetic field away from the memory element.
Original Abstract Submitted
A memory device includes a memory unit and a shielding element disposed on the memory unit. The memory unit includes a bottom electrode, a memory element disposed on the bottom electrode, and a top electrode disposed on the memory element. The shielding element is disposed on the memory unit to deviate an external magnetic field away from the memory element.
