US Patent Application 17726812. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shih-Hang Chiu of Taichung City (TW)
Yu-Hong Lu of Hsinchu City (TW)
Hui-Chi Chen of Zhudong Township (TW)
Kuo-Feng Yu of Zhudong Township (TW)
Jian-Hao Chen of Hsinchu City (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17726812 Titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE'
Simplified Explanation
This abstract describes a method of manufacturing a semiconductor device. It involves creating an opening in a dielectric layer and forming a lower conductive layer within the opening. The lower conductive layer is then recessed to create a space. A blanket conductive layer is deposited over the recessed lower conductive layer, as well as on the sidewall of the space and the upper surface of the dielectric layer. Some of the blanket conductive layer on the sidewall and upper surface is removed, resulting in the formation of an upper conductive layer on top of the lower conductive layer. Finally, a cap insulating layer is formed over the upper conductive layer within the space. The blanket conductive layer is created using physical vapor deposition.
Original Abstract Submitted
In a method of manufacturing a semiconductor device, a lower conductive layer is formed in an opening formed in a dielectric layer, and the lower conductive layer is recessed to form a space. A blanket conductive layer is formed over the recessed lower conductive layer in the space, a sidewall of the space and an upper surface of the dielectric layer. Part of the blanket conductive layer formed on the sidewall of the opening and the upper surface of the dielectric layer is removed, thereby forming a upper conductive layer on the lower conductive layer, and a cap insulating layer is formed over the upper conductive layer in the space. The blanket conductive layer is formed by physical vapor deposition.
