US Patent Application 17726522. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ren-Kai Chen of Hsinchu County (TW)
Li-Chen Lee of Taoyuan City (TW)
Ying-Liang Chuang of Hsinchu County (TW)
Kuo-Bin Huang of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17726522 Titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF'
Simplified Explanation
This abstract describes a method of forming a semiconductor device. The method involves creating a structure called an epitaxial source/drain (S/D) next to a gate structure. A dielectric structure is then formed over the gate and epitaxial S/D structures. A trench is made in the dielectric structure to expose a part of the epitaxial S/D structure. A contact feature is formed from this exposed part within the trench. A S/D contact is also formed in the trench to connect with the contact feature. To create the contact feature, a metallic layer is formed in the trench and then subjected to a thermal process. After this process, some metallic residues are left on the sidewall of a spacer in the dielectric structure within the trench. These residues are removed using a wet etching process, while keeping the spacer intact.
Original Abstract Submitted
A method of forming a semiconductor device includes forming an epitaxial source/drain (S/D) structure adjacent to a gate structure; forming a dielectric structure over the gate and epitaxial S/D structures; forming a trench in the dielectric structure to accessibly expose a portion of the epitaxial S/D structure; forming a contact feature from the portion of the epitaxial S/D structure within the trench; and forming a S/D contact in the trench to be in contact with the contact feature overlying the epitaxial S/D structure. Forming the contact feature includes forming a metallic layer in the trench; performing a thermal process on the metallic layer to form the contact feature, where after the thermal process, metallic residues remain on a sidewall of a spacer of the dielectric structure in the trench; and removing the metallic residues by using a wet etching process, wherein the spacer of the dielectric structure remains substantially intact.
