US Patent Application 17725384. NOR GATE BASED LOCAL ACCESS LINE DESELECT SIGNAL GENERATION simplified abstract
Contents
NOR GATE BASED LOCAL ACCESS LINE DESELECT SIGNAL GENERATION
Organization Name
Inventor(s)
Yasir Mohsin Husain of Folsom CA (US)
Everardo Flores, Iii of Penryn CA (US)
Neeladri Sain of Folsom CA (US)
NOR GATE BASED LOCAL ACCESS LINE DESELECT SIGNAL GENERATION - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17725384 Titled 'NOR GATE BASED LOCAL ACCESS LINE DESELECT SIGNAL GENERATION'
Simplified Explanation
The abstract describes a memory device that consists of multiple access lines and memory cells. Each memory cell is connected to a local access line and a global access line. The device also includes signal lines to control select devices that connect the global access lines to the local access lines. Additionally, there is a NOR gate that generates deselect signals to control deselect devices, which connect the local access lines to a deselect voltage.
Original Abstract Submitted
A memory device comprising a plurality of first global access lines, second global access lines, first local access lines, and second local access lines; and a plurality of memory cells, wherein a memory cell is coupled to one of the first local access lines and one of the second local access lines. The memory device further comprises a plurality of signal lines to communicate local access line select signals to control a plurality of select devices, wherein a select device selectively couples one of the first global access lines to one of the first local access lines; and a NOR gate to accept the plurality of local access line select signals as inputs and generate a plurality of local access line deselect signals to control a plurality of deselect devices, wherein a deselect device selectively couples one of the first local access lines to a deselect voltage.
