US Patent Application 17725090. COVERED CAVITY FOR A PHOTONIC INTEGRATED CIRCUIT (PIC) simplified abstract

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COVERED CAVITY FOR A PHOTONIC INTEGRATED CIRCUIT (PIC)

Organization Name

Intel Corporation


Inventor(s)

Chia-Pin Chiu of Tempe AZ (US)


Omkar G. Karhade of Chandler AZ (US)


Kaveh Hosseini of Livermore CA (US)


Tim T. Hoang of San Jose CA (US)


Nitin A. Deshpande of Chandler AZ (US)


COVERED CAVITY FOR A PHOTONIC INTEGRATED CIRCUIT (PIC) - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17725090 Titled 'COVERED CAVITY FOR A PHOTONIC INTEGRATED CIRCUIT (PIC)'

Simplified Explanation

The abstract describes a structure for photonic integrated circuits (PICs) that includes a micro-ring resonator (MRR) with a heater. The structure involves creating air cavities in different layers of the circuit, such as an overlaying oxide layer, a buried oxide layer, or an underlying silicon layer. These air cavities can be customized in terms of size, shape, and location to manage heat effectively. A thin film is placed on top of the air cavity to prevent any interference with the performance of silicon waveguides and to prevent underfill from entering the cavity. This structure can be used for multiple MRRs in an array.


Original Abstract Submitted

Covered cavity structure for Photonic integrated circuits (PICs) that include a micro-ring resonator (MRR) with a heater. Air cavities are etched or otherwise thinned into an overlaying oxide layer, a buried oxide layer, or an underlying silicon layer. Variations in size, shape, and location of the covered air cavity associated with an MRR provide customizable options for thermal management. A thin film across an upper surface covers the air cavity, providing a barrier to underfill in the air cavity and preventing interference of underfill with performance of silicon waveguides. When arrayed into a plurality of MRRs, the thin film can cover the plurality of MRRs.