US Patent Application 17721668. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Ming-Lung Cheng of Kaohsiung City (TW)

Huang-Hsuan Lin of Hsinchu City (TW)

Chih-Chieh Yeh of Taipei City (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 17721668 Titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME'

Simplified Explanation

This abstract describes a method for creating a semiconductor device structure. The method involves several steps, including the formation of nanostructures on a substrate. A work function layer is then applied around the nanostructures, followed by the addition of spacers on either side of the work function layer. A first metal layer is then applied over the work function layer and the spacer sidewalls. Within this first metal layer, a second metal layer is formed. The first metal layer is then etched away from the sides of the second metal layer. Finally, a cap layer is added to the top surface and sidewall of the second metal layer.

Original Abstract Submitted

A method for forming a semiconductor device structure includes forming nanostructures over a substrate. The method also includes forming a work function layer surrounding the nanostructures. The method also includes forming spacers over opposite sides of the work function layer. The method also includes forming a first metal layer over the work function layer and sidewalls of the spacers. The method also includes forming a second metal layer surrounded by the first metal layer. The method also includes etching the first metal layer over opposite sides of the second metal layer. The method also includes forming a cap layer over a top surface and a sidewall of the second metal layer.