US Patent Application 17720988. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE INTERCONNECT AND METHOD OF MAKING THE SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE INTERCONNECT AND METHOD OF MAKING THE SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE INTERCONNECT AND METHOD OF MAKING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17720988 Titled 'SEMICONDUCTOR DEVICE INCLUDING GRAPHENE INTERCONNECT AND METHOD OF MAKING THE SEMICONDUCTOR DEVICE'
Simplified Explanation
The abstract describes a semiconductor device that consists of a semiconductor substrate, multiple layers of intercalated graphene structures, and a via. The intercalated graphene structures are placed on top of the semiconductor substrate and each structure is made up of several layers of graphene that are parallel to the substrate. The via is a connection that goes into one of the intercalated graphene structures and reaches the semiconductor substrate. It is in contact with the edges of the graphene layers in that structure.
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate, a plurality of intercalated graphene structures and a via. The intercalated graphene structures are disposed over the semiconductor substrate. Each of the intercalated graphene structures includes a plurality of graphene layers each extending substantially parallel to the semiconductor substrate. The via extends into at least a portion of one of the intercalated graphene structures toward the semiconductor substrate, and is in contact with edges of corresponding ones of the graphene layers of the one of the intercalated graphene structures.
