US Patent Application 17717406. METAL GATE MEMORY DEVICE AND METHOD simplified abstract
Contents
METAL GATE MEMORY DEVICE AND METHOD
Organization Name
Inventor(s)
Hyucksoo Yang of Meridian ID (US)
Byung Yoon Kim of Boise ID (US)
METAL GATE MEMORY DEVICE AND METHOD - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17717406 Titled 'METAL GATE MEMORY DEVICE AND METHOD'
Simplified Explanation
The abstract describes an invention related to memory devices and systems. It mentions the use of memory cells and transistors in an array. The memory cells are connected to a number of data lines, which are made from a different metal than the transistor's gate. These data lines directly interface with the transistor's gate.
Original Abstract Submitted
Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include an array of memory cells and a transistor located on a periphery of the array of memory cells. A number of data lines are shown coupled to memory cells in the array, wherein the number of data lines extend over a first metal gate of a transistor in the periphery of the array, where the number of data lines are formed from a second metal, and form a direct interface with the first metal gate.
