US Patent Application 17716580. NON-DESTRUCTIVE PATTERN IDENTIFICATION AT A MEMORY DEVICE simplified abstract

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NON-DESTRUCTIVE PATTERN IDENTIFICATION AT A MEMORY DEVICE

Organization Name

Micron Technology, Inc.


Inventor(s)

Yuan He of Boise ID (US)


Takamasa Suzuki of Tokyo (JP)


NON-DESTRUCTIVE PATTERN IDENTIFICATION AT A MEMORY DEVICE - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17716580 Titled 'NON-DESTRUCTIVE PATTERN IDENTIFICATION AT A MEMORY DEVICE'

Simplified Explanation

This abstract describes methods, systems, and devices for identifying patterns in a memory device without causing any damage to the data stored in the device. The memory device can compare two data patterns and determine if they match or not. It does this by accessing the memory cells and latching the second data pattern to a sense amplifier. The device then deactivates the word line, isolating the memory cells to protect the data. It writes the first data pattern to the sense amplifier and compares it with the second data pattern. Finally, the device outputs a signal indicating whether the data patterns match or not.


Original Abstract Submitted

Methods, systems, and devices for non-destructive pattern identification at a memory device are described. A memory device may perform pattern identification within the memory device and output a flag indicating whether a first data pattern matches with a second data pattern. The memory device may access one or more memory cells, via a word line, and latch the second data pattern of the memory cells to a sense amplifier. The memory device may deactivate the word line, which may result in isolating the memory cells from potential destruction of data. The memory device may write a first data pattern to the sense amplifier and compare the first data pattern and second data pattern at the sense amplifier. The memory device may output a signal indicating whether the data patterns match.