US Patent Application 17714771. TRENCH AND PIER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract
Contents
TRENCH AND PIER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS
Organization Name
Inventor(s)
Fabio Pellizzer of Boise ID (US)
Russell L. Meyer of Boise ID (US)
Stephen W. Russell of Boise ID (US)
Lorenzo Fratin of Buccinasco (MI) (IT)
TRENCH AND PIER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17714771 Titled 'TRENCH AND PIER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS'
Simplified Explanation
This abstract describes methods, systems, and devices for creating trench and pier architectures in three-dimensional memory arrays. These architectures involve forming pier structures in contact with alternating layers of materials deposited on a substrate. These pier structures provide support for further processing. The memory die includes alternating layers of a first and second material, which can be shaped into different cross-sectional patterns. The pier structures are formed in contact with these patterns, ensuring that when one of the materials is removed to create voids, the pier structures provide mechanical support for the remaining material's cross-sectional pattern. These pier structures can be formed within or along trenches or other features aligned in the direction of the memory array, allowing for self-alignment in subsequent operations.
Original Abstract Submitted
Methods, systems, and devices for trench and pier architectures for three-dimensional memory arrays are described. A semiconductor device (e.g., a memory die) may include pier structures formed in contact with features formed from alternating layers of materials deposited over a substrate, which may provide support for subsequent processing. For example, a memory die may include alternating layers of a first material and a second material, which may be formed into various cross-sectional patterns. Pier structures may be formed in contact with the cross sectional patterns such that, when either the first material or the second material is removed to form voids, the pier structures may provide mechanical support of the cross-sectional pattern of the remaining material. In some examples, such pier structures may be formed within or along trenches or other features aligned along a direction of a memory array, which may provide a degree of self-alignment for subsequent operations.
