US Patent Application 17664525. SEMICONDUCTOR WAVEGUIDES AND METHODS OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR WAVEGUIDES AND METHODS OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yuan-Sheng Huang of Taichung City (TW)
Shih-Chang Liu of Kaohsiung County (TW)
SEMICONDUCTOR WAVEGUIDES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17664525 titled 'SEMICONDUCTOR WAVEGUIDES AND METHODS OF FORMING THE SAME
Simplified Explanation
- The patent application describes a method to prevent tapering of a silicon waveguide during etching of a supporting dielectric and substrate. - A side slab structure is deposited on a cladding layer after etching the cladding layer. - This deposition prevents tapering of the silicon waveguide. - The method improves wave intensity and total internal reflection, leading to improved efficiency of an electronic device integrated on the substrate.
Original Abstract Submitted
Depositing a side slab structure on a cladding layer before etching a supporting dielectric prevents tapering of a silicon waveguide during etching of the supporting dielectric and a substrate. For example, the side slab structure may be deposited over the silicon waveguide and the cladding layer after etching the cladding layer. As a result, when an electronic device is integrated ex situ on the substrate, wave intensity and/or total internal reflection is improved, which improves an efficiency of the electronic device.
