US Patent Application 17662571. METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING simplified abstract
Contents
METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Min-Ying Tsai of Kaohsiung City (TW)
Chih-Ping Chang of Tainan City (TW)
METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17662571 titled 'METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING
Simplified Explanation
The abstract describes a semiconductor device and methods of formation that include a photodiode device and a metal-insulator-metal deep-trench capacitor. The capacitor includes an amorphous material layer that helps reduce leakage and improve the performance of the device.
- The semiconductor device includes a photodiode device and a metal-insulator-metal deep-trench capacitor.
- The deep-trench capacitor has an amorphous material layer between the insulator layer stack and the capacitor bottom metal layer.
- The amorphous material has a bandgap energy level that reduces electron tunneling and improves the device's lag performance.
- The amorphous material helps overcome leakage issues associated with grain boundaries, crystal defects, and interfaces in the insulator layer stack.
Original Abstract Submitted
Some implementations described herein provide a semiconductor device and methods of formation. The semiconductor device may include a photodiode device electrically connected to a metal-insulator-metal deep-trench capacitor. The metal-insulator-metal deep-trench capacitor includes a layer of an amorphous material between an insulator layer stack of the deep-trench capacitor structure and a capacitor bottom metal layer of the metal-insulator-metal deep-trench capacitor. The amorphous material includes a bandgap energy level that provides a conduction band offset and lowers a probability of electron tunneling from the capacitor bottom metal electrode layer to the insulator layer stack. In this way, leakage associated with grain boundaries, crystal defects, and interfaces of a bottom layer of the insulator layer stack may be overcome to improve a lag performance of the semiconductor device including the metal-insulator-metal deep-trench capacitor.
