US Patent Application 17662439. RESISTOR STRUCTURE IN INTEGRATED CIRCUIT simplified abstract
Contents
RESISTOR STRUCTURE IN INTEGRATED CIRCUIT
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Baozhen Li of South Burlington VT (US)
Chih-Chao Yang of Glenmont NY (US)
Ashim Dutta of Clifton Park NY (US)
RESISTOR STRUCTURE IN INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17662439 titled 'RESISTOR STRUCTURE IN INTEGRATED CIRCUIT
Simplified Explanation
The patent application describes a resistor structure that consists of two layers: an electrically insulating layer and a resistive layer.
- The first layer is made of a material with high thermal conductivity, equal to or greater than 100 W/m/K.
- The second layer is made of resistive material and is directly adjacent to the first layer.
- The first layer of electrically insulating material has a band gap equal to or greater than 4 eV.
- The electrically insulating material can be selected from a group of materials including aluminum-nitride (AlN), boron-nitride (BN), and diamond (C).
Original Abstract Submitted
Embodiments of present invention provide a resistor structure. The resistor structure includes a first layer of electrically insulating material; and a second layer of resistive material directly adjacent to the first layer, wherein thermal conductivity of the first layer is equal to or larger than 100 W/m/K. In one embodiment, the first layer of electrically insulating material has a band gap equal to or larger than 4 eV and is selected from a group consisting of aluminum-nitride (AlN), boron-nitride (BN), and diamond (C).
