View source for US Patent Application 17662436. LOCAL INTERCONNECT FOR CROSS COUPLING simplified abstract

=LOCAL INTERCONNECT FOR CROSS COUPLING=


==Organization Name==

[[INTERNATIONAL BUSINESS MACHINES CORPORATION]]


==Inventor(s)==

[[Heng Wu of Santa Clara CA (US)]]

[[Ruilong Xie of Niskayuna NY (US)]]

[[Albert M. Chu of Nashua NH (US)]]

[[Albert M. Young of Fishkill NY (US)]]

[[Junli Wang of Slingerlands NY (US)]]

[[Brent A. Anderson of Jericho VT (US)]]

==LOCAL INTERCONNECT FOR CROSS COUPLING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17662436 titled 'LOCAL INTERCONNECT FOR CROSS COUPLING

==Simplified Explanation==

The patent application describes a transistor structure and a method of manufacturing it. Here are the key points:

* The transistor structure consists of multiple layers of transistors.
* There are first and second transistors in the first transistor layer, and corresponding first and second transistors in the second transistor layer.
* A metal routing layer is present between the first and second transistor layers.
* A first local interconnect connects the first transistor of the first transistor layer to the metal routing layer.
* A second local interconnect connects the metal routing layer to the second transistor of the second transistor layer.

Overall, this patent application introduces a transistor structure with multiple layers and interconnects, providing a more efficient and compact design.


==Original Abstract Submitted==

Embodiments of present invention provide a transistor structure. The transistor structure includes a first and a second transistor in a first transistor layer; a first and a second transistor in a second transistor layer, respectively, above the first and the second transistor in the first transistor layer; a metal routing layer between the first transistor layer and the second transistor layer; a first local interconnect connecting the first transistor of the first transistor layer to the metal routing layer; and a second local interconnect connecting the metal routing layer to the second transistor of the second transistor layer. A method of manufacturing the transistor structure is also provided.