US Patent Application 17662436. LOCAL INTERCONNECT FOR CROSS COUPLING simplified abstract

LOCAL INTERCONNECT FOR CROSS COUPLING

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Heng Wu of Santa Clara CA (US)

Ruilong Xie of Niskayuna NY (US)

Albert M. Chu of Nashua NH (US)

Albert M. Young of Fishkill NY (US)

Junli Wang of Slingerlands NY (US)

Brent A. Anderson of Jericho VT (US)

LOCAL INTERCONNECT FOR CROSS COUPLING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17662436 titled 'LOCAL INTERCONNECT FOR CROSS COUPLING

Simplified Explanation

The patent application describes a transistor structure and a method of manufacturing it. Here are the key points:

• The transistor structure consists of multiple layers of transistors.
• There are first and second transistors in the first transistor layer, and corresponding first and second transistors in the second transistor layer.
• A metal routing layer is present between the first and second transistor layers.
• A first local interconnect connects the first transistor of the first transistor layer to the metal routing layer.
• A second local interconnect connects the metal routing layer to the second transistor of the second transistor layer.

Overall, this patent application introduces a transistor structure with multiple layers and interconnects, providing a more efficient and compact design.

Original Abstract Submitted

Embodiments of present invention provide a transistor structure. The transistor structure includes a first and a second transistor in a first transistor layer; a first and a second transistor in a second transistor layer, respectively, above the first and the second transistor in the first transistor layer; a metal routing layer between the first transistor layer and the second transistor layer; a first local interconnect connecting the first transistor of the first transistor layer to the metal routing layer; and a second local interconnect connecting the metal routing layer to the second transistor of the second transistor layer. A method of manufacturing the transistor structure is also provided.