US Patent Application 17662185. SEMICONDUCTOR DEVICE AND METHODS OF FORMATION simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsu Ming Hsiao of Hsinchu (TW)
Hsiu-Hao Tsao of Taichung (TW)
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17662185 titled 'SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
Simplified Explanation
- This patent application describes techniques and semiconductor devices for including a dielectric region in a nanostructure transistor. - The dielectric region, which could be an air gap, is located between dielectric spacer layers along the sidewall of a metal gate structure. - The dielectric region is formed using a temporary spacer layer made of silicon germanium material. - The temporary spacer layer can be selectively removed without causing damage to the dielectric spacer layers, metal gate structure, or other parts of the nanostructure transistor.
Original Abstract Submitted
Some implementations described herein provide techniques and semiconductor devices in which a dielectric region is included in a nanostructure transistor. The dielectric region, which may correspond to an air gap, may be located between dielectric spacer layers located along a sidewall of a metal gate structure. Techniques to form the dielectric region may include using a temporary spacer layer between the dielectric spacer layers during manufacturing of the nanostructure transistor. The temporary spacer layer may include a silicon germanium material having a reaction mechanism that allows the temporary spacer layer to be selectively removed without causing damage to the dielectric spacer layers, the metal gate structure, or other portions of the nanostructure transistor.
