US Patent Application 17662126. REPLACEMENT SIDEWALL SPACERS simplified abstract
Contents
REPLACEMENT SIDEWALL SPACERS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ming-Chang Wen of Kaohsiung (TW)
REPLACEMENT SIDEWALL SPACERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17662126 titled 'REPLACEMENT SIDEWALL SPACERS
Simplified Explanation
The patent application describes a device with a replacement spacer structure and a method for forming such a structure.
- The method involves forming an initial spacer structure with a specific etch rate for a chosen etchant.
- A portion of the initial spacer structure is then removed, leaving behind a remaining portion.
- A replacement spacer structure is formed adjacent to the remaining portion of the initial spacer structure, creating a combined spacer structure.
- The combined spacer structure has an intermediate etch rate for the chosen etchant, which is lower than the initial etch rate.
- Finally, the combined spacer structure is etched with the chosen etchant to form a final spacer structure.
Original Abstract Submitted
Provided is a device with a replacement spacer structure and a method for forming such a structure. The method includes forming an initial spacer structure, wherein the initial spacer structure has an initial etch rate for a selected etchant. The method further includes removing a portion of the initial spacer structure, wherein a remaining portion of the initial spacer structure is not removed. Also, the method includes forming a replacement spacer structure adjacent to the remaining portion of the initial spacer structure to form a combined spacer structure, wherein the combined spacer structure has an intermediate etch rate for the selected etchant that is less than the initial etch rate for a selected etchant. Further, the method includes etching the combined spacer structure with the selected etchant to form a final spacer structure.
