US Patent Application 17661979. MICROELECTRONIC DEVICES INCLUDING VERTICAL INVERTERS, AND ELECTRONIC SYSTEMS simplified abstract

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MICROELECTRONIC DEVICES INCLUDING VERTICAL INVERTERS, AND ELECTRONIC SYSTEMS

Organization Name

Micron Technology, Inc.


Inventor(s)

Kamal M. Karda of Boise ID (US)

Durai Vishak Nirmal Ramaswamy of Boise ID (US)

Karthik Sarpatwari of Boise ID (US)

Haitao Liu of Boise ID (US)

MICROELECTRONIC DEVICES INCLUDING VERTICAL INVERTERS, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17661979 titled 'MICROELECTRONIC DEVICES INCLUDING VERTICAL INVERTERS, AND ELECTRONIC SYSTEMS

Simplified Explanation

The abstract describes a microelectronic device that includes a vertical inverter with a pillar structure.

  • The pillar structure is positioned above a first conductive line and includes a first vertical transistor that is connected to the first conductive line.
  • There is also a second conductive line that is vertically positioned above the first conductive line and is isolated from it by a dielectric material.
  • The second conductive line is designed to be connected to a ground structure.
  • Additionally, there is a second vertical transistor that is located next to the first vertical transistor and is connected to the second conductive line.
  • The second vertical transistor is separated from the first vertical transistor by the dielectric material.
  • The device also includes at least one electrode that extends horizontally along the channel regions of both the first and second vertical transistors.

The patent application describes various microelectronic devices and electronic systems that incorporate this vertical inverter structure.


Original Abstract Submitted

A microelectronic device comprises vertical inverter comprising a pillar structure vertically extending above a first conductive line. The pillar structure comprises a first vertical transistor vertically overlying and in electrical communication with the first conductive line, a second conductive line vertically overlying the first conductive line and electrically isolated from the first conductive line by a dielectric material, the second conductive line configured to be coupled to a ground structure, a second vertical transistor horizontally neighboring the first vertical transistor and in electrical communication with the second conductive line, the second vertical transistor horizontally spaced from the first vertical transistor by the dielectric material, and at least one electrode horizontally extending along a channel region of the first vertical transistor and an additional channel region of the second vertical transistor. Related microelectronic devices and electronic systems are also described.

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