US Patent Application 17661795. VARYING THE PO SPACE IN SEMICONDUCTOR LAYOUTS simplified abstract

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VARYING THE PO SPACE IN SEMICONDUCTOR LAYOUTS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Feng-Ming Chang of Hsinchu (TW)

Jui-wen Chang of Hsinchu (TW)

Chao-Yuan Chang of Hsinchu (TW)

VARYING THE PO SPACE IN SEMICONDUCTOR LAYOUTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17661795 titled 'VARYING THE PO SPACE IN SEMICONDUCTOR LAYOUTS

Simplified Explanation

The abstract describes a semiconductor device with multiple cells arranged in an array.

  • Each cell consists of active regions arranged in one direction and conductive regions arranged in another direction.
  • The conductive regions are spaced apart and positioned over the active regions.
  • The first through fifth conductive regions contain one or more conductors.
  • The conductors in the first and fifth regions have a larger dimension along the first direction compared to the conductors in the third region.
  • The pitch (spacing) between conductors in the second and fourth regions is different from the pitch between a conductor in the second or fourth region and a conductor in the closest neighboring region that is not the second or fourth region.


Original Abstract Submitted

A semiconductor device comprising a plurality of cells arranged in an array is disclosed. Each cell comprises: at least one active region arranged along a first direction; and at least five spaced apart conductive regions arranged along a second direction disposed over the active regions, wherein the first through fifth conductive regions comprise one or more conductors, wherein the one or more conductors have a dimension along the first direction. The dimension along the first direction is larger for at least one conductor in the first or fifth conductive regions than the dimension along the first direction for a conductor in the third conductive region. The pitch between conductors in the second and the fourth conductive region and the pitch between a conductor in the second or fourth conductive region and a conductor in a next closest conductive region that is not the second or fourth conductive region are different.

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