US Patent Application 17661221. ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE simplified abstract
Contents
ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE
Organization Name
Inventor(s)
Abhijeet Paul of Escondido CA (US)
Ravi Pramod Kumar Vedula of San Diego CA (US)
Hyunchul Jung of San Diego CA (US)
ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17661221 Titled 'ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE'
Simplified Explanation
The abstract describes a transistor in a device that has an uneven resistance or an uneven capacitive coupling, or both. This transistor can be used in an amplifier configuration to improve the performance of the amplifier at low currents. The uneven resistance can be achieved by doping the source and drain structures of the transistor differently or by manipulating the geometries of these structures differently. The uneven capacitive coupling can be achieved by placing dielectrics above the transistor's gate in different locations. Additionally, the body of the transistor can be biased.
Original Abstract Submitted
Disclosed is a transistor of a device that has an asymmetric resistance or an asymmetric capacitive coupling or both. When used in a cascode configuration in an amplifier, low current performance of the amplifier is improved. Asymmetric resistance may be enabled through differentially doping source and drain structures of the transistor and/or through differentially manipulating geometries the source and drain structures. Asymmetric capacitive coupling may be enabled through providing dielectrics and differentially locating the dielectrics above a gate of the transistor. Further, a body of the transistor may be biased.
